Silicon N-Channel MOSFET Transistor, 44 A, 100 V, 8-Pin PG-TDSON Infineon BSC0803LSATMA1
Product Information
Maximum Drain Source Voltage:
100 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Channel Type:
N
Maximum Gate Threshold Voltage:
2.3V
Maximum Drain Source Resistance:
0.0146 Ω
Package Type:
SuperSO8 5 x 6
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
44 A
Transistor Material:
Silicon
Pin Count:
8
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship BSC0803LSATMA1 Internationally to many countries around the world.
This is Silicon N-Channel MOSFET Transistor 44 A 100 V 8-Pin PG-TDSON manufactured by Infineon. The manufacturer part number is BSC0803LSATMA1. It has a maximum of 100 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The product carries 2.3v of maximum gate threshold voltage. It provides up to 0.0146 ω maximum drain source resistance. The package is a sort of superso8 5 x 6. It consists of 1 elements per chip. While 44 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 8 pins.
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