SiC N-Channel MOSFET Module, 45 A, 1200 V AG-EASY1B-2 Infineon F423MR12W1M1B76BPSA1
Product Information
Maximum Drain Source Voltage:
1200 V
Maximum Continuous Drain Current:
45 A
Mounting Type:
Chassis Mount
Series:
F4
Transistor Material:
SiC
Maximum Gate Threshold Voltage:
5.55V
Package Type:
AG-EASY1B-2
Channel Type:
N
Maximum Drain Source Resistance:
0.0225 Ω
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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This is SiC N-Channel MOSFET Module 45 A 1200 V AG-EASY1B-2 manufactured by Infineon. The manufacturer part number is F423MR12W1M1B76BPSA1. It has a maximum of 1200 v drain source voltage. While 45 a of maximum continuous drain current. The product is available in chassis mount configuration. The product f4, is a highly preferred choice for users. The transistor is manufactured from highly durable sic material. The product carries 5.55v of maximum gate threshold voltage. The package is a sort of ag-easy1b-2. The product is available in [Cannel Type] channel. It provides up to 0.0225 ω maximum drain source resistance.
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