N-Channel MOSFET, 108 A, 200 V, 8-Pin PG-HSOG-8-1 Infineon IPTG111N20NM3FDATMA1
Product Information
Maximum Drain Source Voltage:
200 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
IPTG
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.0111 Ω
Package Type:
PG HSOG-8 (TOLG)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
108 A
Pin Count:
8
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship IPTG111N20NM3FDATMA1 Internationally to many countries around the world.
This is N-Channel MOSFET 108 A 200 V 8-Pin PG-HSOG-8-1 manufactured by Infineon. The manufacturer part number is IPTG111N20NM3FDATMA1. It has a maximum of 200 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product iptg, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.0111 ω maximum drain source resistance. The package is a sort of pg hsog-8 (tolg). It consists of 1 elements per chip. While 108 a of maximum continuous drain current. It contains 8 pins.
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