N-Channel 30 V (D-S) MOSFET
Product Information
Maximum Drain Source Voltage:
30 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
TrenchFET
Channel Type:
N
Maximum Gate Threshold Voltage:
2.2V
Maximum Drain Source Resistance:
0.00325 Ω
Package Type:
PowerPAK 1212-8SH
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
67.4 A
Transistor Material:
Si
Pin Count:
8
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FAQs
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You can order Vishay brand products with SiSH536DN-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel 30 V (D-S) MOSFET. You can also check on our website or by contacting our customer support team for further order details on N-Channel 30 V (D-S) MOSFET.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET22535419 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET22535419.
Yes. We ship SiSH536DN-T1-GE3 Internationally to many countries around the world.
This is N-Channel 30 V (D-S) MOSFET manufactured by Vishay. The manufacturer part number is SiSH536DN-T1-GE3. It has a maximum of 30 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.2v of maximum gate threshold voltage. It provides up to 0.00325 ω maximum drain source resistance. The package is a sort of powerpak 1212-8sh. It consists of 1 elements per chip. While 67.4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 8 pins.
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