N-Channel 100 V (D-S) 175C MOSFET

SIJH112E-T1-GE3 N-Channel 100 V (D-S) 175C MOSFET
Vishay

Product Information

Maximum Drain Source Voltage:
100 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
TrenchFET
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.0028 Ω
Package Type:
PowerPAK 8 x 8L
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
225 A
Transistor Material:
Si
Pin Count:
4
RoHs Compliant
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This is N-Channel 100 V (D-S) 175C MOSFET manufactured by Vishay. The manufacturer part number is SIJH112E-T1-GE3. It has a maximum of 100 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.0028 ω maximum drain source resistance. The package is a sort of powerpak 8 x 8l. It consists of 1 elements per chip. While 225 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 4 pins.

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Datasheet - SIJH112E-T1-GE3(Technical Reference)

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FAQs

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