E Series Power MOSFET
Product Information
Maximum Drain Source Voltage:
850 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
E Series
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.95 Ω
Package Type:
TO-220AB
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
5 A
Transistor Material:
Si
Pin Count:
3
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FAQs
Yes. You can also search SiHP6N80AE-GE3 on website for other similar products.
We accept all major payment methods for all products including ET22535397. Please check your shopping cart at the time of order.
You can order Vishay brand products with SiHP6N80AE-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of E Series Power MOSFET. You can also check on our website or by contacting our customer support team for further order details on E Series Power MOSFET.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET22535397 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET22535397.
Yes. We ship SiHP6N80AE-GE3 Internationally to many countries around the world.
This is E Series Power MOSFET manufactured by Vishay. The manufacturer part number is SiHP6N80AE-GE3. It has a maximum of 850 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product e series, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.95 ω maximum drain source resistance. The package is a sort of to-220ab. It consists of 1 elements per chip. While 5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.
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