E Series Power MOSFET
Product Information
Maximum Drain Source Voltage:
650 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
E Series
Channel Type:
N
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
0.12 Ω
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
25 A
Transistor Material:
Si
Pin Count:
3
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FAQs
Yes. You can also search SIHB120N60E-T1-GE3 on website for other similar products.
We accept all major payment methods for all products including ET22535379. Please check your shopping cart at the time of order.
You can order Vishay brand products with SIHB120N60E-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of E Series Power MOSFET. You can also check on our website or by contacting our customer support team for further order details on E Series Power MOSFET.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET22535379 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET22535379.
Yes. We ship SIHB120N60E-T1-GE3 Internationally to many countries around the world.
This is E Series Power MOSFET manufactured by Vishay. The manufacturer part number is SIHB120N60E-T1-GE3. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product e series, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5v of maximum gate threshold voltage. It provides up to 0.12 ω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 2 elements per chip. While 25 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.
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