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This is E Series Power MOSFET manufactured by Vishay. The manufacturer part number is SIHA24N80AE-GE3. It has a maximum of 850 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product e series, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.184 ω maximum drain source resistance. The package is a sort of to-220 fp. It consists of 1 elements per chip. While 9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.
For more information please check the datasheets.
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