Silicon N-Channel MOSFET, 58 A, 650 V, 3-Pin PG-TO247 Infineon IMW65R030M1HXKSA1
Product Information
Maximum Drain Source Voltage:
650 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
CoolSiC
Channel Type:
N
Maximum Gate Threshold Voltage:
5.7V
Maximum Drain Source Resistance:
0.042 Ω
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
58 A
Transistor Material:
Silicon
Pin Count:
3
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This is Silicon N-Channel MOSFET 58 A 650 V 3-Pin PG-TO247 manufactured by Infineon. The manufacturer part number is IMW65R030M1HXKSA1. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product coolsic, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5.7v of maximum gate threshold voltage. It provides up to 0.042 ω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. While 58 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.
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