Quad N-Channel MOSFET Transistor, 6 A, 950 V, 3-Pin PG-SOT223 Infineon IPN95R1K2P7ATMA1
Product Information
Maximum Drain Source Voltage:
950 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
CoolMOS P7
Channel Type:
N
Maximum Gate Threshold Voltage:
3.5V
Maximum Drain Source Resistance:
0.12 Ω
Package Type:
SOT-223
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
6 A
Pin Count:
3
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Quad N-Channel MOSFET Transistor, 6 A, 950 V, 3-Pin PG-SOT223 Infineon IPN95R1K2P7ATMA1. You can also check on our website or by contacting our customer support team for further order details on Quad N-Channel MOSFET Transistor, 6 A, 950 V, 3-Pin PG-SOT223 Infineon IPN95R1K2P7ATMA1.
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Yes. We ship IPN95R1K2P7ATMA1 Internationally to many countries around the world.
This is Quad N-Channel MOSFET Transistor 6 A 950 V 3-Pin PG-SOT223 manufactured by Infineon. The manufacturer part number is IPN95R1K2P7ATMA1. It has a maximum of 950 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product coolmos p7, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.5v of maximum gate threshold voltage. It provides up to 0.12 ω maximum drain source resistance. The package is a sort of sot-223. It consists of 1 elements per chip. While 6 a of maximum continuous drain current. It contains 3 pins.
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