N-Channel MOSFET, 4 A, 800 V, 3-Pin SOT-223 Infineon IPN80R1K4P7ATMA1

Infineon

Product Information

Forward Voltage Vf:
0.9V
Width:
3.7 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
10nC
Package Type:
SOT-223
Maximum Continuous Drain Current Id:
4A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
1.4Ω
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
800V
Channel Type:
Type N
Length:
6.7mm
Standards/Approvals:
No
Pin Count:
3
Mount Type:
Surface
Maximum Power Dissipation Pd:
7W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
800V CoolMOS P7
Height:
1.8mm
Minimum Operating Temperature:
-55°C
RoHs Compliant
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This is N-Channel MOSFET 4 A 800 V 3-Pin SOT-223 manufactured by Infineon. The manufacturer part number is IPN80R1K4P7ATMA1. Furthermore, the product is 3.7 mm wide. The product complies with automotive standard - no. The package is a sort of sot-223. mosfet is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 150°c. The product is available in [Cannel Type] channel. Its accurate length is 6.7mm. It contains 3 pins. It has a surface type mount . The product carries enhancement channel mode. The product 800v coolmos p7, is a highly preferred choice for users. In addition, the height is 1.8mm. Whereas, the minimum operating temperature of the product is -55°c.

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Datasheet - IPN80R1K4P7ATMA1(Technical Reference)

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