Dual Silicon N-Channel MOSFET, 20 A, 40 V, 8-Pin SuperSO8 5x6 Infineon IPG20N04S4L11AATMA1

Infineon

Product Information

Forward Voltage Vf:
0.9V
Width:
5.9 mm
Maximum Drain Source Resistance Rds:
11.6mΩ
Automotive Standard:
AEC-Q101
Transistor Configuration:
Dual
Typical Gate Charge Qg @ Vgs:
20nC
Package Type:
SuperSO
Number of Elements per Chip:
2
Maximum Continuous Drain Current Id:
20A
Product Type:
Power Transistor
Maximum Operating Temperature:
175°C
Maximum Drain Source Voltage Vds:
40V
Channel Type:
Type N
Length:
5.15mm
Standards/Approvals:
AEC-Q101
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
41W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
16 V
Series:
IPG
Height:
1mm
Minimum Operating Temperature:
-55°C
RoHs Compliant
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This is Dual Silicon N-Channel MOSFET 20 A 40 V 8-Pin SuperSO8 5x6 manufactured by Infineon. The manufacturer part number is IPG20N04S4L11AATMA1. Furthermore, the product is 5.9 mm wide. The product complies with automotive standard - aec-q101. The product offers dual transistor configuration. The package is a sort of superso. It consists of 2 elements per chip. power transistor is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 175°c. The product is available in [Cannel Type] channel. Its accurate length is 5.15mm. It contains 8 pins. It has a surface type mount . The product carries enhancement channel mode. The product ipg, is a highly preferred choice for users. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55°c.

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Datasheet - IPG20N04S4L11AATMA1(Technical Reference)

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