Dual Silicon N-Channel MOSFET, 20 A, 40 V, 8-Pin SuperSO8 5x6 Infineon IPG20N04S412AATMA1

Enrgtech Part No: ET21647449
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Manufacturer Part No:
IPG20N04S412AATMA1
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Manufacturer: Infineon

IPG20N04S412AATMA1 Dual Silicon N-Channel MOSFET, 20 A, 40 V, 8-Pin SuperSO8 5x6 Infineon

Product Information

Maximum Drain Source Voltage:

40 V

Mounting Type:

Surface Mount

Channel Mode:

Enhancement

Series:

OptiMOS™ -T2

Channel Type:

Maximum Gate Threshold Voltage:

Maximum Drain Source Resistance:

0.01219 Ω

Package Type:

SuperSO8 5 x 6 Dual

Number of Elements per Chip:

Maximum Continuous Drain Current:

20 A

Transistor Material:

Silicon

Pin Count:

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This is Dual Silicon N-Channel MOSFET 20 A 40 V 8-Pin SuperSO8 5x6 manufactured by Infineon. The manufacturer part number is IPG20N04S412AATMA1. It has a maximum of 40 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™ -t2, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.01219 ω maximum drain source resistance. The package is a sort of superso8 5 x 6 dual. It consists of 2 elements per chip. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 8 pins.

Datasheet - IPG20N04S412AATMA1(Technical Reference)

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You can order Infineon brand products with IPG20N04S412AATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.

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Dual Silicon N-Channel MOSFET, 20 A, 40 V, 8-Pin SuperSO8 5x6 Infineon IPG20N04S412AATMA1

IPG20N04S412AATMA1

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