Silicon N-Channel MOSFET, 40 A, 100 V, 8-Pin PQFN 3.3 x 3.3 Infineon IAUZ40N10S5N130ATMA1

Enrgtech Part No: ET21647435
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Manufacturer Part No:
IAUZ40N10S5N130ATMA1
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Manufacturer: Infineon

IAUZ40N10S5N130ATMA1 Silicon N-Channel MOSFET, 40 A, 100 V, 8-Pin PQFN 3.3 x 3.3 Infineon

Product Information

Maximum Drain Source Voltage:

100 V

Mounting Type:

Surface Mount

Channel Mode:

Enhancement

Series:

OptiMOS™ 5

Channel Type:

Maximum Gate Threshold Voltage:

3.8V

Maximum Drain Source Resistance:

0.013 Ω

Package Type:

PQFN 3 x 3

Number of Elements per Chip:

Maximum Continuous Drain Current:

40 A

Transistor Material:

Silicon

Pin Count:

Checking for live stock

This is Silicon N-Channel MOSFET 40 A 100 V 8-Pin PQFN 3.3 x 3.3 manufactured by Infineon. The manufacturer part number is IAUZ40N10S5N130ATMA1. It has a maximum of 100 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™ 5, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.8v of maximum gate threshold voltage. It provides up to 0.013 ω maximum drain source resistance. The package is a sort of pqfn 3 x 3. It consists of 1 elements per chip. While 40 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 8 pins.

Datasheet - IAUZ40N10S5N130ATMA1(Technical Reference)

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Silicon N-Channel MOSFET, 40 A, 100 V, 8-Pin PQFN 3.3 x 3.3 Infineon IAUZ40N10S5N130ATMA1

IAUZ40N10S5N130ATMA1

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