N-Channel MOSFET, 8.5 A, 700 V, 3-Pin IPAK Infineon IPS70R600P7SAKMA1
Product Information
Maximum Drain Source Voltage:
700 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
IPS70R
Channel Type:
N
Maximum Gate Threshold Voltage:
3.5V
Maximum Drain Source Resistance:
600 mΩ
Package Type:
IPAK SL (TO-251 SL)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
8.5 A
Transistor Material:
Si
Pin Count:
3
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET, 8.5 A, 700 V, 3-Pin IPAK Infineon IPS70R600P7SAKMA1. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 8.5 A, 700 V, 3-Pin IPAK Infineon IPS70R600P7SAKMA1.
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Yes. We ship IPS70R600P7SAKMA1 Internationally to many countries around the world.
This is N-Channel MOSFET 8.5 A 700 V 3-Pin IPAK manufactured by Infineon. The manufacturer part number is IPS70R600P7SAKMA1. It has a maximum of 700 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product ips70r, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.5v of maximum gate threshold voltage. It provides up to 600 mω maximum drain source resistance. The package is a sort of ipak sl (to-251 sl). It consists of 1 elements per chip. While 8.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.
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