N-Channel MOSFET, 26 A, 1200 V, 4-Pin PG-TO247-4 Infineon IMZ120R090M1HXKSA1
Product Information
Maximum Drain Source Voltage:
1200 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
IMZ1
Channel Type:
N
Maximum Gate Threshold Voltage:
4.5V
Maximum Drain Source Resistance:
90 mΩ
Package Type:
TO-247-4
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
26 A
Transistor Material:
Si
Pin Count:
4
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FAQs
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET, 26 A, 1200 V, 4-Pin PG-TO247-4 Infineon IMZ120R090M1HXKSA1. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 26 A, 1200 V, 4-Pin PG-TO247-4 Infineon IMZ120R090M1HXKSA1.
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Yes. We ship IMZ120R090M1HXKSA1 Internationally to many countries around the world.
This is N-Channel MOSFET 26 A 1200 V 4-Pin PG-TO247-4 manufactured by Infineon. The manufacturer part number is IMZ120R090M1HXKSA1. It has a maximum of 1200 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product imz1, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.5v of maximum gate threshold voltage. It provides up to 90 mω maximum drain source resistance. The package is a sort of to-247-4. It consists of 1 elements per chip. While 26 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 4 pins.
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