Silicon N-Channel MOSFET, 84 A, 60 V, 3-Pin D2Pak IRF1010ES Infineon IRF1010ESTRLPBF

IRF1010ESTRLPBF Silicon N-Channel MOSFET, 84 A, 60 V, 3-Pin D2Pak IRF1010ES Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
60 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
HEXFET
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.012 Ω
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
84 A
Transistor Material:
Silicon
Pin Count:
3
RoHs Compliant
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This is Silicon N-Channel MOSFET 84 A 60 V 3-Pin D2Pak IRF1010ES manufactured by Infineon. The manufacturer part number is IRF1010ESTRLPBF. It has a maximum of 60 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product hexfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.012 ω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. While 84 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.

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Datasheet - IRF1010ESTRLPBF(Technical Reference)

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