Silicon N-Channel MOSFET, 76 A, 600 V, 4-Pin PG-TO 247-4-3 Infineon IPZA60R037P7XKSA1
Product Information
Maximum Drain Source Voltage:
600 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
CoolMOS
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.037 Ω
Package Type:
TO-247-4
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
76 A
Transistor Material:
Silicon
Pin Count:
4
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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This is Silicon N-Channel MOSFET 76 A 600 V 4-Pin PG-TO 247-4-3 manufactured by Infineon. The manufacturer part number is IPZA60R037P7XKSA1. It has a maximum of 600 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product coolmos, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.037 ω maximum drain source resistance. The package is a sort of to-247-4. It consists of 1 elements per chip. While 76 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 4 pins.
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