Silicon N-Channel MOSFET, 20 A, 100 V, 8-Pin PG-TDSON-8-4 Infineon IPG20N10S4L22ATMA1

Enrgtech Part No: ET21632810
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Manufacturer Part No:
IPG20N10S4L22ATMA1
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Manufacturer: Infineon

IPG20N10S4L22ATMA1 Silicon N-Channel MOSFET, 20 A, 100 V, 8-Pin PG-TDSON-8-4 Infineon

Product Information

Forward Voltage Vf:

Width:

5.9 mm

Maximum Drain Source Resistance Rds:

22mΩ

Automotive Standard:

AEC-Q101

Transistor Configuration:

Dual

Typical Gate Charge Qg @ Vgs:

21nC

Package Type:

TDSON

Number of Elements per Chip:

Maximum Continuous Drain Current Id:

20A

Product Type:

Power Transistor

Maximum Operating Temperature:

175°C

Maximum Drain Source Voltage Vds:

100V

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This is Silicon N-Channel MOSFET 20 A 100 V 8-Pin PG-TDSON-8-4 manufactured by Infineon. The manufacturer part number is IPG20N10S4L22ATMA1. Furthermore, the product is 5.9 mm wide. The product complies with automotive standard - aec-q101. The product offers dual transistor configuration. The package is a sort of tdson. It consists of 2 elements per chip. power transistor is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 175°c. The product is available in [Cannel Type] channel. Its accurate length is 5.15mm. It contains 8 pins. It has a surface type mount . The product carries enhancement channel mode. The product coolmos, is a highly preferred choice for users. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55°c.

Datasheet - IPG20N10S4L22ATMA1(Technical Reference)

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Yes. Our products in MOSFETs category are shipped in lowest possible time.

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Silicon N-Channel MOSFET, 20 A, 100 V, 8-Pin PG-TDSON-8-4 Infineon IPG20N10S4L22ATMA1

IPG20N10S4L22ATMA1

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