Silicon N-Channel MOSFET, 1.9 A, 80 V, 3-Pin PG-TO 252 Infineon IPD80R2K8CEATMA1

Infineon

Product Information

Forward Voltage Vf:
1.2V
Width:
6.22 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
12nC
Package Type:
TO-252
Maximum Continuous Drain Current Id:
1.9A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
2.8Ω
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
80V
Channel Type:
Type N
Length:
6.73mm
Standards/Approvals:
No
Pin Count:
3
Mount Type:
Surface
Maximum Power Dissipation Pd:
42W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
CoolMOS
Height:
2.41mm
Minimum Operating Temperature:
-55°C
RoHs Compliant
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This is Silicon N-Channel MOSFET 1.9 A 80 V 3-Pin PG-TO 252 manufactured by Infineon. The manufacturer part number is IPD80R2K8CEATMA1. Furthermore, the product is 6.22 mm wide. The product complies with automotive standard - no. The package is a sort of to-252. mosfet is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 150°c. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. It has a surface type mount . The product carries enhancement channel mode. The product coolmos, is a highly preferred choice for users. In addition, the height is 2.41mm. Whereas, the minimum operating temperature of the product is -55°c.

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Datasheet - IPD80R2K8CEATMA1(Technical Reference)

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