Name: IPD80R2K8CEATMA1, Infineon
Brand: Infineon
SKU: ET21632806
Price: 0.28 GBP
Availability: InStock

IPD80R2K8CEATMA1 Silicon N-Channel MOSFET, 1.9 A, 80 V, 3-Pin PG-TO 252 Infineon

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Product Information

Maximum Drain Source Voltage:

80 V

Mounting Type:

Surface Mount

Channel Mode:

Enhancement

Series:

CoolMOS™

Channel Type:

Maximum Gate Threshold Voltage:

3.9V

Maximum Drain Source Resistance:

2.8 Ω

Package Type:

TO-252

Number of Elements per Chip:

Maximum Continuous Drain Current:

1.9 A

Transistor Material:

Silicon

Pin Count:

Checking for live stock

This is Silicon N-Channel MOSFET 1.9 A 80 V 3-Pin PG-TO 252 manufactured by Infineon. The manufacturer part number is IPD80R2K8CEATMA1. It has a maximum of 80 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product coolmos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.9v of maximum gate threshold voltage. It provides up to 2.8 ω maximum drain source resistance. The package is a sort of to-252. It consists of 1 elements per chip. While 1.9 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.

Datasheet - IPD80R2K8CEATMA1(Technical Reference)

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You can order Infineon brand products with IPD80R2K8CEATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.

Yes. Our products in MOSFETs category are shipped in lowest possible time.

You will get a confirmation email regarding your order of Silicon N-Channel MOSFET, 1.9 A, 80 V, 3-Pin PG-TO 252 Infineon IPD80R2K8CEATMA1. You can also check on our website or by contacting our customer support team for further order details on Silicon N-Channel MOSFET, 1.9 A, 80 V, 3-Pin PG-TO 252 Infineon IPD80R2K8CEATMA1.

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Silicon N-Channel MOSFET, 1.9 A, 80 V, 3-Pin PG-TO 252 Infineon IPD80R2K8CEATMA1

IPD80R2K8CEATMA1

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