Silicon N-Channel MOSFET, 12 A, 650 V, 3-Pin PG-TO252-3 Infineon IPD60R280P7ATMA1
Product Information
Maximum Drain Source Voltage:
650 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
CoolMOS
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.28 Ω
Package Type:
TO-252
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
12 A
Transistor Material:
Silicon
Pin Count:
3
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship IPD60R280P7ATMA1 Internationally to many countries around the world.
This is Silicon N-Channel MOSFET 12 A 650 V 3-Pin PG-TO252-3 manufactured by Infineon. The manufacturer part number is IPD60R280P7ATMA1. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product coolmos, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.28 ω maximum drain source resistance. The package is a sort of to-252. It consists of 1 elements per chip. While 12 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.
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