Name: IPD60R280P7ATMA1, Infineon
Brand: Infineon
SKU: ET21632805
Price: 0.43 GBP
Availability: PreOrder

IPD60R280P7ATMA1 Silicon N-Channel MOSFET, 12 A, 650 V, 3-Pin PG-TO252-3 Infineon

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Product Information

Automotive Standard:

Maximum Power Dissipation Pd:

53W

Product Type:

MOSFET

Maximum Drain Source Voltage Vds:

650V

Channel Mode:

Enhancement

Typical Gate Charge Qg @ Vgs:

18nC

Series:

CoolMOS

Maximum Gate Source Voltage Vgs:

20 V

Forward Voltage Vf:

0.9V

Height:

2.41mm

Width:

6.22 mm

Length:

6.73mm

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This is Silicon N-Channel MOSFET 12 A 650 V 3-Pin PG-TO252-3 manufactured by Infineon. The manufacturer part number is IPD60R280P7ATMA1. The product complies with automotive standard - no. mosfet is a versatile product designed to provide user-defined applications. The product carries enhancement channel mode. The product coolmos, is a highly preferred choice for users. In addition, the height is 2.41mm. Furthermore, the product is 6.22 mm wide. Its accurate length is 6.73mm. The package is a sort of to-252. The product is available in [Cannel Type] channel. It contains 3 pins. It has a surface type mount .

Datasheet - IPD60R280P7ATMA1(Technical Reference)

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You can order Infineon brand products with IPD60R280P7ATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.

Yes. Our products in MOSFETs category are shipped in lowest possible time.

You will get a confirmation email regarding your order of Silicon N-Channel MOSFET, 12 A, 650 V, 3-Pin PG-TO252-3 Infineon IPD60R280P7ATMA1. You can also check on our website or by contacting our customer support team for further order details on Silicon N-Channel MOSFET, 12 A, 650 V, 3-Pin PG-TO252-3 Infineon IPD60R280P7ATMA1.

Silicon N-Channel MOSFET, 12 A, 650 V, 3-Pin PG-TO252-3 Infineon IPD60R280P7ATMA1

IPD60R280P7ATMA1

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