Silicon N-Channel MOSFET, 100 A, 100 V, 8-Pin PG-TDSON-8 Infineon IAUC100N10S5N040ATMA1
Product Information
Maximum Drain Source Voltage:
100 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS
Channel Type:
N
Maximum Gate Threshold Voltage:
3.8V
Maximum Drain Source Resistance:
0.004 Ω
Package Type:
SuperSO8 5 x 6
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
100 A
Transistor Material:
Silicon
Pin Count:
8
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Silicon N-Channel MOSFET, 100 A, 100 V, 8-Pin PG-TDSON-8 Infineon IAUC100N10S5N040ATMA1. You can also check on our website or by contacting our customer support team for further order details on Silicon N-Channel MOSFET, 100 A, 100 V, 8-Pin PG-TDSON-8 Infineon IAUC100N10S5N040ATMA1.
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Yes. We ship IAUC100N10S5N040ATMA1 Internationally to many countries around the world.
This is Silicon N-Channel MOSFET 100 A 100 V 8-Pin PG-TDSON-8 manufactured by Infineon. The manufacturer part number is IAUC100N10S5N040ATMA1. It has a maximum of 100 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.8v of maximum gate threshold voltage. It provides up to 0.004 ω maximum drain source resistance. The package is a sort of superso8 5 x 6. It consists of 1 elements per chip. While 100 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 8 pins.
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