Dual P-Channel MOSFET Transistor & Diode, 5.6 A, 20 V, 2-Pin D2PAK Infineon IRLMS6802TRPBF

IRLMS6802TRPBF Dual P-Channel MOSFET Transistor & Diode, 5.6 A, 20 V, 2-Pin D2PAK Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
20 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
HEXFET
Channel Type:
P
Maximum Gate Threshold Voltage:
12V
Maximum Drain Source Resistance:
0.05 O
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
5.6 A
Pin Count:
2
RoHs Compliant
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This is Dual P-Channel MOSFET Transistor & Diode 5.6 A 20 V 2-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRLMS6802TRPBF. It has a maximum of 20 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product hexfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 12v of maximum gate threshold voltage. It provides up to 0.05 o maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 2 elements per chip. While 5.6 a of maximum continuous drain current. It contains 2 pins.

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Datasheet - IRLMS6802TRPBF(Technical Reference)

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You will get a confirmation email regarding your order of Dual P-Channel MOSFET Transistor & Diode, 5.6 A, 20 V, 2-Pin D2PAK Infineon IRLMS6802TRPBF. You can also check on our website or by contacting our customer support team for further order details on Dual P-Channel MOSFET Transistor & Diode, 5.6 A, 20 V, 2-Pin D2PAK Infineon IRLMS6802TRPBF.
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