Dual N-Channel MOSFET Transistor & Diode, 8.8 A, 30 V, 8-Pin PQFN Infineon IRFHS8342TRPBF
Product Information
Maximum Drain Source Voltage:
30 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
HEXFET
Channel Type:
N
Maximum Gate Threshold Voltage:
20V
Maximum Drain Source Resistance:
0.016 O
Package Type:
DFN2020
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
8.8 A
Pin Count:
8
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Dual N-Channel MOSFET Transistor & Diode, 8.8 A, 30 V, 8-Pin PQFN Infineon IRFHS8342TRPBF. You can also check on our website or by contacting our customer support team for further order details on Dual N-Channel MOSFET Transistor & Diode, 8.8 A, 30 V, 8-Pin PQFN Infineon IRFHS8342TRPBF.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21626934 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21626934.
Yes. We ship IRFHS8342TRPBF Internationally to many countries around the world.
This is Dual N-Channel MOSFET Transistor & Diode 8.8 A 30 V 8-Pin PQFN manufactured by Infineon. The manufacturer part number is IRFHS8342TRPBF. It has a maximum of 30 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product hexfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 20v of maximum gate threshold voltage. It provides up to 0.016 o maximum drain source resistance. The package is a sort of dfn2020. It consists of 2 elements per chip. While 8.8 a of maximum continuous drain current. It contains 8 pins.
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