Dual N-Channel MOSFET Transistor & Diode, 8.8 A, 30 V, 8-Pin PQFN Infineon IRFHS8342TRPBF

IRFHS8342TRPBF Dual N-Channel MOSFET Transistor & Diode, 8.8 A, 30 V, 8-Pin PQFN Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
30 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
HEXFET
Channel Type:
N
Maximum Gate Threshold Voltage:
20V
Maximum Drain Source Resistance:
0.016 O
Package Type:
DFN2020
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
8.8 A
Pin Count:
8
RoHs Compliant
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This is Dual N-Channel MOSFET Transistor & Diode 8.8 A 30 V 8-Pin PQFN manufactured by Infineon. The manufacturer part number is IRFHS8342TRPBF. It has a maximum of 30 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product hexfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 20v of maximum gate threshold voltage. It provides up to 0.016 o maximum drain source resistance. The package is a sort of dfn2020. It consists of 2 elements per chip. While 8.8 a of maximum continuous drain current. It contains 8 pins.

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Datasheet - IRFHS8342TRPBF(Technical Reference)

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You will get a confirmation email regarding your order of Dual N-Channel MOSFET Transistor & Diode, 8.8 A, 30 V, 8-Pin PQFN Infineon IRFHS8342TRPBF. You can also check on our website or by contacting our customer support team for further order details on Dual N-Channel MOSFET Transistor & Diode, 8.8 A, 30 V, 8-Pin PQFN Infineon IRFHS8342TRPBF.
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