Dual N-Channel MOSFET Transistor & Diode, 100 A, 650 V, 5-Pin PG-VSON-4 Infineon IPL60R105P7AUMA1
Product Information
Maximum Drain Source Voltage:
650 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
CoolMOS P7
Channel Type:
N
Maximum Gate Threshold Voltage:
30V
Maximum Drain Source Resistance:
0.105 O
Package Type:
ThinkPAK 8 x 8
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
100 A
Pin Count:
5
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Dual N-Channel MOSFET Transistor & Diode, 100 A, 650 V, 5-Pin PG-VSON-4 Infineon IPL60R105P7AUMA1. You can also check on our website or by contacting our customer support team for further order details on Dual N-Channel MOSFET Transistor & Diode, 100 A, 650 V, 5-Pin PG-VSON-4 Infineon IPL60R105P7AUMA1.
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Yes. We ship IPL60R105P7AUMA1 Internationally to many countries around the world.
This is Dual N-Channel MOSFET Transistor & Diode 100 A 650 V 5-Pin PG-VSON-4 manufactured by Infineon. The manufacturer part number is IPL60R105P7AUMA1. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product coolmos p7, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 30v of maximum gate threshold voltage. It provides up to 0.105 o maximum drain source resistance. The package is a sort of thinkpak 8 x 8. It consists of 1 elements per chip. While 100 a of maximum continuous drain current. It contains 5 pins.
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