Dual N-Channel MOSFET Transistor & Diode, 30 A, 60 V, 3-Pin PG-TO252 Infineon IPD30N06S4L23ATMA2

Infineon

Product Information

Forward Voltage Vf:
1.3V
Width:
6.22 mm
Automotive Standard:
AEC-Q101
Typical Gate Charge Qg @ Vgs:
16.1nC
Package Type:
TO-252
Maximum Continuous Drain Current Id:
30A
Product Type:
MOSFET & Diode
Maximum Drain Source Resistance Rds:
23mΩ
Maximum Operating Temperature:
175°C
Maximum Drain Source Voltage Vds:
60V
Channel Type:
Type N
Length:
6.73mm
Standards/Approvals:
No
Pin Count:
3
Mount Type:
Surface
Maximum Power Dissipation Pd:
36W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
16 V
Series:
OptiMOS
Height:
2.41mm
Minimum Operating Temperature:
-55°C
RoHs Compliant
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This is Dual N-Channel MOSFET Transistor & Diode 30 A 60 V 3-Pin PG-TO252 manufactured by Infineon. The manufacturer part number is IPD30N06S4L23ATMA2. Furthermore, the product is 6.22 mm wide. The product complies with automotive standard - aec-q101. The package is a sort of to-252. mosfet & diode is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 175°c. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. It has a surface type mount . The product carries enhancement channel mode. The product optimos, is a highly preferred choice for users. In addition, the height is 2.41mm. Whereas, the minimum operating temperature of the product is -55°c.

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Datasheet - IPD30N06S4L23ATMA2(Technical Reference)

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