Dual N-Channel MOSFET Transistor & Diode, 90 A, 40 V, 8-Pin PG-TDSON Infineon IPC90N04S53R6ATMA1
Product Information
Maximum Drain Source Voltage:
40 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS 5
Channel Type:
N
Maximum Gate Threshold Voltage:
20V
Maximum Drain Source Resistance:
0.0035 O
Package Type:
SuperSO8 5 x 6
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
90 A
Pin Count:
8
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Dual N-Channel MOSFET Transistor & Diode, 90 A, 40 V, 8-Pin PG-TDSON Infineon IPC90N04S53R6ATMA1. You can also check on our website or by contacting our customer support team for further order details on Dual N-Channel MOSFET Transistor & Diode, 90 A, 40 V, 8-Pin PG-TDSON Infineon IPC90N04S53R6ATMA1.
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Yes. We ship IPC90N04S53R6ATMA1 Internationally to many countries around the world.
This is Dual N-Channel MOSFET Transistor & Diode 90 A 40 V 8-Pin PG-TDSON manufactured by Infineon. The manufacturer part number is IPC90N04S53R6ATMA1. It has a maximum of 40 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos 5, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 20v of maximum gate threshold voltage. It provides up to 0.0035 o maximum drain source resistance. The package is a sort of superso8 5 x 6. It consists of 1 elements per chip. While 90 a of maximum continuous drain current. It contains 8 pins.
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