Dual N-Channel MOSFET Transistor & Diode, 151 A, 650 V, 3-Pin PG-TO263 Infineon IPB60R060P7ATMA1
Product Information
Maximum Drain Source Voltage:
650 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
CoolMOS P7
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.06 O
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
151 A
Pin Count:
3
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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This is Dual N-Channel MOSFET Transistor & Diode 151 A 650 V 3-Pin PG-TO263 manufactured by Infineon. The manufacturer part number is IPB60R060P7ATMA1. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product coolmos p7, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.06 o maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. While 151 a of maximum continuous drain current. It contains 3 pins.
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