Dual N-Channel MOSFET Transistor & Diode, 180 A, 40 V, 7-Pin PG-TO263 Infineon IPB011N04LGATMA1

IPB011N04LGATMA1 Dual N-Channel MOSFET Transistor & Diode, 180 A, 40 V, 7-Pin PG-TO263 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
40 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS™ 5
Channel Type:
N
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
0.0011 O
Package Type:
TO-263-7
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
180 A
Pin Count:
7
RoHs Compliant
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This is Dual N-Channel MOSFET Transistor & Diode 180 A 40 V 7-Pin PG-TO263 manufactured by Infineon. The manufacturer part number is IPB011N04LGATMA1. It has a maximum of 40 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™ 5, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2v of maximum gate threshold voltage. It provides up to 0.0011 o maximum drain source resistance. The package is a sort of to-263-7. It consists of 2 elements per chip. While 180 a of maximum continuous drain current. It contains 7 pins.

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Datasheet - IPB011N04LGATMA1(Technical Reference)

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