Dual N-Channel MOSFET Transistor & Diode, 87 A, 650 V, 3-Pin PG-TO 220 FullPAK Infineon IPA60R125P6XKSA1

IPA60R125P6XKSA1 Dual N-Channel MOSFET Transistor & Diode, 87 A, 650 V, 3-Pin PG-TO 220 FullPAK Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
650 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
CoolMOS™ P6
Channel Type:
N
Maximum Gate Threshold Voltage:
4.5V
Maximum Drain Source Resistance:
0.125 O
Package Type:
TO-220 FP
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
87 A
Pin Count:
3
RoHs Compliant
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This is Dual N-Channel MOSFET Transistor & Diode 87 A 650 V 3-Pin PG-TO 220 FullPAK manufactured by Infineon. The manufacturer part number is IPA60R125P6XKSA1. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product coolmos™ p6, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.5v of maximum gate threshold voltage. It provides up to 0.125 o maximum drain source resistance. The package is a sort of to-220 fp. It consists of 1 elements per chip. While 87 a of maximum continuous drain current. It contains 3 pins.

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Datasheet - IPA60R125P6XKSA1(Technical Reference)

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You will get a confirmation email regarding your order of Dual N-Channel MOSFET Transistor & Diode, 87 A, 650 V, 3-Pin PG-TO 220 FullPAK Infineon IPA60R125P6XKSA1. You can also check on our website or by contacting our customer support team for further order details on Dual N-Channel MOSFET Transistor & Diode, 87 A, 650 V, 3-Pin PG-TO 220 FullPAK Infineon IPA60R125P6XKSA1.
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