Dual N-Channel MOSFET Transistor & Diode, 82 A, 80 V, 8-Pin PG-TDSON Infineon BSC061N08NS5ATMA1

Infineon

Product Information

Forward Voltage Vf:
1.1V
Width:
6.1 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
27nC
Package Type:
TDSON
Maximum Continuous Drain Current Id:
82A
Product Type:
MOSFET & Diode
Maximum Drain Source Resistance Rds:
6.1mΩ
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
80V
Channel Type:
Type N
Length:
5.35mm
Standards/Approvals:
No
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
74W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
OptiMOS 3
Height:
1.2mm
Minimum Operating Temperature:
-55°C
RoHs Compliant
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This is Dual N-Channel MOSFET Transistor & Diode 82 A 80 V 8-Pin PG-TDSON manufactured by Infineon. The manufacturer part number is BSC061N08NS5ATMA1. Furthermore, the product is 6.1 mm wide. The product complies with automotive standard - no. The package is a sort of tdson. mosfet & diode is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 150°c. The product is available in [Cannel Type] channel. Its accurate length is 5.35mm. It contains 8 pins. It has a surface type mount . The product carries enhancement channel mode. The product optimos 3, is a highly preferred choice for users. In addition, the height is 1.2mm. Whereas, the minimum operating temperature of the product is -55°c.

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Datasheet - BSC061N08NS5ATMA1(Technical Reference)

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