Dual N-Channel MOSFET Transistor & Diode, 137 A, 60 V, 8-Pin PG-TDSON Infineon BSC028N06NSTATMA1
Product Information
Maximum Drain Source Voltage:
60 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS
Channel Type:
N
Maximum Gate Threshold Voltage:
3.3V
Maximum Drain Source Resistance:
0.0028 O
Package Type:
SuperSO8 5 x 6
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
137 A
Pin Count:
8
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship BSC028N06NSTATMA1 Internationally to many countries around the world.
This is Dual N-Channel MOSFET Transistor & Diode 137 A 60 V 8-Pin PG-TDSON manufactured by Infineon. The manufacturer part number is BSC028N06NSTATMA1. It has a maximum of 60 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.3v of maximum gate threshold voltage. It provides up to 0.0028 o maximum drain source resistance. The package is a sort of superso8 5 x 6. It consists of 2 elements per chip. While 137 a of maximum continuous drain current. It contains 8 pins.
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