Dual N-Channel MOSFET, 20 A, 100 V, 8-Pin PG-TDSON-8-10 Infineon IPG20N10S436AATMA1

Infineon

Product Information

Forward Voltage Vf:
1V
Width:
5.9 mm
Maximum Drain Source Resistance Rds:
36mΩ
Automotive Standard:
AEC-Q101
Transistor Configuration:
Dual
Typical Gate Charge Qg @ Vgs:
9.4nC
Package Type:
TDSON
Number of Elements per Chip:
2
Maximum Continuous Drain Current Id:
20A
Product Type:
Power Transistor
Maximum Operating Temperature:
175°C
Maximum Drain Source Voltage Vds:
100V
Channel Type:
Type N
Length:
5.15mm
Standards/Approvals:
AEC Q101, RoHS
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
43W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
OptiMOS-T2
Height:
1mm
Minimum Operating Temperature:
-55°C
RoHs Compliant
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This is Dual N-Channel MOSFET 20 A 100 V 8-Pin PG-TDSON-8-10 manufactured by Infineon. The manufacturer part number is IPG20N10S436AATMA1. Furthermore, the product is 5.9 mm wide. The product complies with automotive standard - aec-q101. The product offers dual transistor configuration. The package is a sort of tdson. It consists of 2 elements per chip. power transistor is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 175°c. The product is available in [Cannel Type] channel. Its accurate length is 5.15mm. It contains 8 pins. It has a surface type mount . The product carries enhancement channel mode. The product optimos-t2, is a highly preferred choice for users. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55°c.

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Datasheet - IPG20N10S436AATMA1(Technical Reference)

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