Dual N-Channel MOSFET, 20 A, 100 V, 8-Pin PG-TDSON-8-10 Infineon IPG20N10S436AATMA1
Product Information
Maximum Drain Source Voltage:
100 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS™-T2
Channel Type:
N
Maximum Gate Threshold Voltage:
3.5V
Maximum Drain Source Resistance:
0.036 Ω
Package Type:
SuperSO8 5 x 6 Dual
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Pin Count:
8
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Dual N-Channel MOSFET, 20 A, 100 V, 8-Pin PG-TDSON-8-10 Infineon IPG20N10S436AATMA1. You can also check on our website or by contacting our customer support team for further order details on Dual N-Channel MOSFET, 20 A, 100 V, 8-Pin PG-TDSON-8-10 Infineon IPG20N10S436AATMA1.
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Yes. We ship IPG20N10S436AATMA1 Internationally to many countries around the world.
This is Dual N-Channel MOSFET 20 A 100 V 8-Pin PG-TDSON-8-10 manufactured by Infineon. The manufacturer part number is IPG20N10S436AATMA1. It has a maximum of 100 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™-t2, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.5v of maximum gate threshold voltage. It provides up to 0.036 ω maximum drain source resistance. The package is a sort of superso8 5 x 6 dual. It consists of 2 elements per chip. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 8 pins.
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