N-Channel MOSFET, 86 A, 40 V, 3-Pin DPAK Infineon IPD90N04S405ATMA1
Product Information
Maximum Drain Source Voltage:
40 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS™-T2
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.0052 Ω
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
86 A
Transistor Material:
Si
Pin Count:
3
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This is N-Channel MOSFET 86 A 40 V 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD90N04S405ATMA1. It has a maximum of 40 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™-t2, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.0052 ω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. While 86 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.
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