N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK Infineon IPD50N06S4L12ATMA2
Product Information
Maximum Drain Source Voltage:
60 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS™-T2
Channel Type:
N
Maximum Gate Threshold Voltage:
2.2V
Maximum Drain Source Resistance:
0.012 Ω
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
50 A
Transistor Material:
Si
Pin Count:
3
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship IPD50N06S4L12ATMA2 Internationally to many countries around the world.
This is N-Channel MOSFET 50 A 60 V 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD50N06S4L12ATMA2. It has a maximum of 60 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™-t2, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.2v of maximum gate threshold voltage. It provides up to 0.012 ω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. While 50 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.
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