Hex N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2BM-2 Infineon DF23MR12W1M1B11BPSA1
Product Information
Maximum Drain Source Voltage:
1200 V
Maximum Continuous Drain Current:
25 A
Mounting Type:
Screw Mount
Series:
CoolSiC
Channel Type:
N
Maximum Gate Threshold Voltage:
20V
Package Type:
AG-EASY2BM-2
Maximum Drain Source Resistance:
0.066 Ω
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FAQs
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Hex N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2BM-2 Infineon DF23MR12W1M1B11BPSA1. You can also check on our website or by contacting our customer support team for further order details on Hex N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2BM-2 Infineon DF23MR12W1M1B11BPSA1.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21616061 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21616061.
Yes. We ship DF23MR12W1M1B11BPSA1 Internationally to many countries around the world.
This is Hex N-Channel MOSFET Module 25 A 1200 V AG-EASY2BM-2 manufactured by Infineon. The manufacturer part number is DF23MR12W1M1B11BPSA1. It has a maximum of 1200 v drain source voltage. While 25 a of maximum continuous drain current. The product is available in screw mount configuration. The product coolsic, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 20v of maximum gate threshold voltage. The package is a sort of ag-easy2bm-2. It provides up to 0.066 ω maximum drain source resistance.
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