N-Channel MOSFET, 2.6 A, 600 V, 3-Pin IPAK Infineon IPS60R3K4CEAKMA1

IPS60R3K4CEAKMA1 N-Channel MOSFET, 2.6 A, 600 V, 3-Pin IPAK Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
600 V
Maximum Continuous Drain Current:
2.6 A
Mounting Type:
Through Hole
Series:
CoolMOS™ CE
Channel Type:
N
Maximum Gate Threshold Voltage:
3.5V
Maximum Drain Source Resistance:
3.4 Ohm
Package Type:
IPAK SL (TO-251 SL)
Number of Elements per Chip:
1
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 2.6 A 600 V 3-Pin IPAK manufactured by Infineon. The manufacturer part number is IPS60R3K4CEAKMA1. It has a maximum of 600 v drain source voltage. While 2.6 a of maximum continuous drain current. The product is available in through hole configuration. The product coolmos™ ce, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.5v of maximum gate threshold voltage. It provides up to 3.4 ohm maximum drain source resistance. The package is a sort of ipak sl (to-251 sl). It consists of 1 elements per chip. It contains 3 pins.

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Datasheet - IPS60R3K4CEAKMA1(Technical Reference)

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