N-Channel MOSFET, 6 A, 600 V, 3-Pin DPAK Infineon IPD60R600P7ATMA1
Product Information
Maximum Drain Source Voltage:
600 V
Maximum Continuous Drain Current:
6 A
Mounting Type:
Surface Mount
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
600 mO
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Pin Count:
3
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET, 6 A, 600 V, 3-Pin DPAK Infineon IPD60R600P7ATMA1. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 6 A, 600 V, 3-Pin DPAK Infineon IPD60R600P7ATMA1.
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Yes. We ship IPD60R600P7ATMA1 Internationally to many countries around the world.
This is N-Channel MOSFET 6 A 600 V 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD60R600P7ATMA1. It has a maximum of 600 v drain source voltage. While 6 a of maximum continuous drain current. The product is available in surface mount configuration. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 600 mo maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. It contains 3 pins.
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