N-Channel MOSFET, 80 A, 40 V D2PAK Infineon IPB80N04S2H4ATMA2

IPB80N04S2H4ATMA2 N-Channel MOSFET, 80 A, 40 V D2PAK Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
40 V
Maximum Continuous Drain Current:
80 A
Mounting Type:
Surface Mount
Series:
CoolMOS™
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
3.7 mO
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 80 A 40 V D2PAK manufactured by Infineon. The manufacturer part number is IPB80N04S2H4ATMA2. It has a maximum of 40 v drain source voltage. While 80 a of maximum continuous drain current. The product is available in surface mount configuration. The product coolmos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 3.7 mo maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. It contains 3 pins.

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Datasheet - IPB80N04S2H4ATMA2(Technical Reference)

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