N-Channel MOSFET, 4 A, 800 V, 3-Pin SOT-223

IPN95R2K0P7ATMA1 N-Channel MOSFET, 4 A, 800 V, 3-Pin SOT-223
Infineon

Product Information

Maximum Drain Source Voltage:
800 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
CoolMOS™
Channel Type:
N
Maximum Gate Threshold Voltage:
3.5V
Maximum Drain Source Resistance:
2 Ω
Package Type:
SOT-223
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 4 A 800 V 3-Pin SOT-223 manufactured by Infineon. The manufacturer part number is IPN95R2K0P7ATMA1. It has a maximum of 800 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product coolmos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.5v of maximum gate threshold voltage. It provides up to 2 ω maximum drain source resistance. The package is a sort of sot-223. It consists of 1 elements per chip. While 4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.

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Datasheet - IPN95R2K0P7ATMA1(Technical Reference)

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