N-Channel MOSFET, 3 A, 800 V, 3-Pin DPAK
Product Information
Maximum Drain Source Voltage:
800 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
800V CoolMOS™ P7
Channel Type:
N
Maximum Gate Threshold Voltage:
3.5V
Maximum Drain Source Resistance:
2 Ω
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Pin Count:
3
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET21607536 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21607536.
Yes. We ship IPD80R2K0P7ATMA1 Internationally to many countries around the world.
This is N-Channel MOSFET 3 A 800 V 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD80R2K0P7ATMA1. It has a maximum of 800 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product 800v coolmos™ p7, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.5v of maximum gate threshold voltage. It provides up to 2 ω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. While 3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.
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