N-Channel MOSFET, 40 A, 100 V, 8-Pin PQFN 3.3 x 3.3

BSZ146N10LS5ATMA1 N-Channel MOSFET, 40 A, 100 V, 8-Pin PQFN 3.3 x 3.3
Infineon

Product Information

Maximum Drain Source Voltage:
100 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS™
Channel Type:
N
Maximum Gate Threshold Voltage:
2.3V
Maximum Drain Source Resistance:
0.0146 Ω
Package Type:
PQFN 3 x 3
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
40 A
Transistor Material:
Si
Pin Count:
8
RoHs Compliant
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This is N-Channel MOSFET 40 A 100 V 8-Pin PQFN 3.3 x 3.3 manufactured by Infineon. The manufacturer part number is BSZ146N10LS5ATMA1. It has a maximum of 100 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.3v of maximum gate threshold voltage. It provides up to 0.0146 ω maximum drain source resistance. The package is a sort of pqfn 3 x 3. It consists of 1 elements per chip. While 40 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 8 pins.

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Datasheet - BSZ146N10LS5ATMA1(Technical Reference)

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