N-Channel MOSFET, 80 A, 60 V, 3-Pin PG-TO262-3-1 Infineon IPI80N06S407AKSA2
Product Information
Maximum Drain Source Voltage:
60 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
OptiMOS-T2
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.0074 O
Package Type:
I2PAK (TO-262)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
80 A
Transistor Material:
Si
Pin Count:
3
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This is N-Channel MOSFET 80 A 60 V 3-Pin PG-TO262-3-1 manufactured by Infineon. The manufacturer part number is IPI80N06S407AKSA2. It has a maximum of 60 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product optimos-t2, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.0074 o maximum drain source resistance. The package is a sort of i2pak (to-262). It consists of 1 elements per chip. While 80 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.
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