N-Channel MOSFET, 7 A, 800 V, 3-Pin PG-TO252-3 Infineon IPD80R750P7ATMA1
Product Information
Maximum Drain Source Voltage:
800 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
CoolMOS P7
Channel Type:
N
Maximum Gate Threshold Voltage:
3.5V
Maximum Drain Source Resistance:
0.75 O
Package Type:
TO-252
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
7 A
Transistor Material:
Si
Pin Count:
3
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship IPD80R750P7ATMA1 Internationally to many countries around the world.
This is N-Channel MOSFET 7 A 800 V 3-Pin PG-TO252-3 manufactured by Infineon. The manufacturer part number is IPD80R750P7ATMA1. It has a maximum of 800 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product coolmos p7, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.5v of maximum gate threshold voltage. It provides up to 0.75 o maximum drain source resistance. The package is a sort of to-252. It consists of 1 elements per chip. While 7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.
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