N-Channel MOSFET, 1.9 A, 800 V, 3-Pin PG-TO252-3 Infineon IPD80R3K3P7ATMA1

IPD80R3K3P7ATMA1 N-Channel MOSFET, 1.9 A, 800 V, 3-Pin PG-TO252-3 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
800 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
CoolMOS™ P7
Channel Type:
N
Maximum Gate Threshold Voltage:
3.5V
Maximum Drain Source Resistance:
3.3 O
Package Type:
TO-252
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
1.9 A
Transistor Material:
Si
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 1.9 A 800 V 3-Pin PG-TO252-3 manufactured by Infineon. The manufacturer part number is IPD80R3K3P7ATMA1. It has a maximum of 800 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product coolmos™ p7, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.5v of maximum gate threshold voltage. It provides up to 3.3 o maximum drain source resistance. The package is a sort of to-252. It consists of 1 elements per chip. While 1.9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.

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Datasheet - IPD80R3K3P7ATMA1(Technical Reference)

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