N-Channel MOSFET, 19 A, 55 V, 3-Pin PG-TO252-3-11 Infineon IPD15N06S2L64ATMA2
Product Information
Maximum Drain Source Voltage:
55 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS
Channel Type:
N
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
0.064 O
Package Type:
TO-252
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
19 A
Transistor Material:
Si
Pin Count:
3
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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This is N-Channel MOSFET 19 A 55 V 3-Pin PG-TO252-3-11 manufactured by Infineon. The manufacturer part number is IPD15N06S2L64ATMA2. It has a maximum of 55 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2v of maximum gate threshold voltage. It provides up to 0.064 o maximum drain source resistance. The package is a sort of to-252. It consists of 1 elements per chip. While 19 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.
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