N-Channel MOSFET, 180 A, 100 V, 7-Pin PG-TO263-7 Infineon IPB024N10N5ATMA1

IPB024N10N5ATMA1 N-Channel MOSFET, 180 A, 100 V, 7-Pin PG-TO263-7 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
100 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS™ 5
Channel Type:
N
Maximum Gate Threshold Voltage:
3.8V
Maximum Drain Source Resistance:
0.0024 O
Package Type:
TO-263-7
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
180 A
Transistor Material:
Si
Pin Count:
7
RoHs Compliant
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This is N-Channel MOSFET 180 A 100 V 7-Pin PG-TO263-7 manufactured by Infineon. The manufacturer part number is IPB024N10N5ATMA1. It has a maximum of 100 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™ 5, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.8v of maximum gate threshold voltage. It provides up to 0.0024 o maximum drain source resistance. The package is a sort of to-263-7. It consists of 1 elements per chip. While 180 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 7 pins.

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Datasheet - IPB024N10N5ATMA1(Technical Reference)

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