N-Channel MOSFET, 100 A, 30 V, 8-Pin PG-TDSON-8 Infineon BSC0502NSIATMA1
Product Information
Maximum Drain Source Voltage:
30 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS 5
Channel Type:
N
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
0.0023 O
Package Type:
SuperSO8 5 x 6
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Pin Count:
8
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET, 100 A, 30 V, 8-Pin PG-TDSON-8 Infineon BSC0502NSIATMA1. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 100 A, 30 V, 8-Pin PG-TDSON-8 Infineon BSC0502NSIATMA1.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21606507 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21606507.
Yes. We ship BSC0502NSIATMA1 Internationally to many countries around the world.
This is N-Channel MOSFET 100 A 30 V 8-Pin PG-TDSON-8 manufactured by Infineon. The manufacturer part number is BSC0502NSIATMA1. It has a maximum of 30 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos 5, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2v of maximum gate threshold voltage. It provides up to 0.0023 o maximum drain source resistance. The package is a sort of superso8 5 x 6. It consists of 1 elements per chip. While 100 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 8 pins.
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