Name: SiSS30ADN-T1-GE3, Vishay
Brand: Vishay
SKU: ET21592005
Price: 0.37 GBP
Availability: InStock

SiSS30ADN-T1-GE3 N-Channel MOSFET, 54.7 A, 80 V, 8-Pin PowerPAK 1212-8S Vishay

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Product Information

Maximum Drain Source Voltage:

80 V

Maximum Continuous Drain Current:

54.7 A

Mounting Type:

Surface Mount

Channel Type:

Maximum Gate Threshold Voltage:

2 → 3.5V

Maximum Drain Source Resistance:

0.0074 Ω

Package Type:

PowerPAK 1212-8S

Number of Elements per Chip:

Pin Count:

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This is N-Channel MOSFET 54.7 A 80 V 8-Pin PowerPAK 1212-8S manufactured by Vishay. The manufacturer part number is SiSS30ADN-T1-GE3. It has a maximum of 80 v drain source voltage. While 54.7 a of maximum continuous drain current. The product is available in surface mount configuration. The product is available in [Cannel Type] channel. The product carries 2 → 3.5v of maximum gate threshold voltage. It provides up to 0.0074 ω maximum drain source resistance. The package is a sort of powerpak 1212-8s. It consists of 1 elements per chip. It contains 8 pins.

Datasheet - SiSS30ADN-T1-GE3(Technical Reference)

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You can order Vishay brand products with SiSS30ADN-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.

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You will get a confirmation email regarding your order of N-Channel MOSFET, 54.7 A, 80 V, 8-Pin PowerPAK 1212-8S Vishay SiSS30ADN-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 54.7 A, 80 V, 8-Pin PowerPAK 1212-8S Vishay SiSS30ADN-T1-GE3.

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N-Channel MOSFET, 54.7 A, 80 V, 8-Pin PowerPAK 1212-8S Vishay SiSS30ADN-T1-GE3

SiSS30ADN-T1-GE3

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