N-Channel MOSFET, 2.9 A, 800 V, 3-Pin IPAK Vishay SIHU2N80AE-GE3
Product Information
Maximum Drain Source Voltage:
800 V
Maximum Continuous Drain Current:
2.9 A
Mounting Type:
Through Hole
Series:
E
Channel Type:
N
Maximum Gate Threshold Voltage:
2 → 4V
Maximum Drain Source Resistance:
2.5 Ω
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Pin Count:
3
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FAQs
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You can order Vishay brand products with SIHU2N80AE-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET, 2.9 A, 800 V, 3-Pin IPAK Vishay SIHU2N80AE-GE3. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 2.9 A, 800 V, 3-Pin IPAK Vishay SIHU2N80AE-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21591998 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21591998.
Yes. We ship SIHU2N80AE-GE3 Internationally to many countries around the world.
This is N-Channel MOSFET 2.9 A 800 V 3-Pin IPAK manufactured by Vishay. The manufacturer part number is SIHU2N80AE-GE3. It has a maximum of 800 v drain source voltage. While 2.9 a of maximum continuous drain current. The product is available in through hole configuration. The product e, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2 → 4v of maximum gate threshold voltage. It provides up to 2.5 ω maximum drain source resistance. The package is a sort of ipak (to-251). It consists of 1 elements per chip. It contains 3 pins.
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